EPSRC Reference: |
GR/A00041/02 |
Title: |
AF: QUANTITATIVE STRAIN-MAPPING IN THIN-FILM SYSTEMS BY COMPLEMENTARY ELECTRON MICROSCOPY TECHNIQUES |
Principal Investigator: |
Moebus, Dr G |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Materials Science and Engineering |
Organisation: |
University of Sheffield |
Scheme: |
Advanced Fellowship (Pre-FEC) |
Starts: |
01 October 2002 |
Ends: |
30 September 2003 |
Value (£): |
39,521
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EPSRC Research Topic Classifications: |
Materials Characterisation |
Materials Synthesis & Growth |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
An epitaxial thin film model system, grown by molecular beam epitaxy, shall be characterized quantitatively with respect to the mode, the strain distribution and degree of strain localisation in its 3D-network configuration. Strain sensitive techniques of transmission electron microscopy, like high-resolution electron microscopy (HREM) in its strain mapping variety, and scanning mode of convergent beam electron diffraction will be developed and applied with special respect to the exceptionally high spatial resolution for microdiffration and imaging provided by the new Oxford FEGTEM (JEM3000F). The examinations will start on the Ag/A1 system in various orientations and film widths, extended later to multiplayer systems and to other thin film problems of technological interest such as e.g. diamond/Si.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.shef.ac.uk |