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Details of Grant 

EPSRC Reference: EP/P005152/1
Title: Integration of Novel Materials in Spintronic Devices
Principal Investigator: Robertson, Professor J
Other Investigators:
Hofmann, Professor S
Researcher Co-Investigators:
Project Partners:
Department: Engineering
Organisation: University of Cambridge
Scheme: Standard Research - NR1
Starts: 01 April 2016 Ends: 31 March 2021 Value (£): 986,782
EPSRC Research Topic Classifications:
Electromagnetics Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
The continued scaling of charge-based computing devices is reaching its limits and, both for more Moore (continued scaling) and more than Moore (functional diversification), the International Semiconductor Roadmap is looking at new materials and their integration in existing manufacturing technology. Two dimensional (2D) materials, such as graphene, exhibit unique electrical, thermal and mechanical properties and show promise as components for a wide range of device applications, in particular spintronics and next generation micro/optoelectronics and systems. Graphene can not only support very high carrier mobilities and current densities, but also has small spin-orbit coupling and large electron coherence length. Also, due to its atomic thickness, it is very interesting for tunnel junction device architectures. With hundreds of millions of computer hard drives sold every year, magnetism is currently the main repository of information storage. It is the electron "spin," the elementary nanomagnet, that carries the information. Beyond storage, spintronics and such new device architectures are foreseen as the foundation for a new paradigm for information processing toward low-power-consumption nonvolatile "green" electronics.

This proposal aims at creating an international research network to develop new integrated electronic and spin-based device concepts based on 2D materials, to overcome key experimental problems such as controlled interfacing and to develop integrated manufacturing technology, which would allow 2D materials to enter the semiconductor roadmap, the key to unlocking their commercial potential. The proposal thereby combines the world leading expertise of the international partners, in particular on the development and manufacture of state-of-the-art semiconductor devices of the Japanese Partners, on 2D manufacturing technology and device material know-how of the UK partners and the spintronics expertise of the French partners. The proposed research has a strong industrial alignment, paving the way for realistic routes to markets for these new materials and device architectures.

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Organisation Website: http://www.cam.ac.uk