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Details of Grant 

EPSRC Reference: EP/F032633/1
Title: Renaissance Germanium
Principal Investigator: Asenov, Professor A
Other Investigators:
Watling, Dr J Barker, Professor JR
Researcher Co-Investigators:
Project Partners:
IMEC
Department: Electronics and Electrical Engineering
Organisation: University of Glasgow
Scheme: Standard Research
Starts: 13 October 2008 Ends: 12 April 2012 Value (£): 372,083
EPSRC Research Topic Classifications:
Materials Characterisation Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
EP/F031408/1 EP/F033893/1
Panel History:
Panel DatePanel NameOutcome
12 Feb 2008 Materials Prioritisation Panel February (Tech) Announced
Summary on Grant Application Form
Germanium, in at the birth of the electronics revolution, is experiencing a renaissance as a semiconductor material - possibly even rivalling silicon, and is attracting huge interest as the silicon end-game hots up. It is perceived, audaciously but by many, as a potential candidate to maintain silicon-like technology and associated devices well beyond the envisaged end of silicon development (around 2020) and also take the technology into exciting new areas and performance regimes. This proposal sets out to explore some of the intriguing aspects and consequences of the fundamental electronic structure of Ge not previously examined. There are good theoretical arguments to suggest that some critical performance parameters can be dramatically enhanced if carriers travel in non-conventional crystallographic directions and when the germanium is under strain. We will investigate how these new environments affect the velocity/mobility and effective mass of the carriers (electrons and holes) and the processes that impede their motion (scattering).
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Organisation Website: http://www.gla.ac.uk