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Details of Grant 

EPSRC Reference: EP/D064600/1
Title: Device Electronics Based on nanoWires and NanoTubes
Principal Investigator: Milne, Professor WI
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Engineering
Organisation: University of Cambridge
Scheme: Standard Research
Starts: 01 January 2007 Ends: 31 December 2009 Value (£): 329,641
EPSRC Research Topic Classifications:
Condensed Matter Physics Electronic Devices & Subsys.
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
EP/D064465/2
Panel History:  
Summary on Grant Application Form
There is considerable scope for CNFETs and Si Nanowires with their capability of ballistic transport, to be introduced into standard CMOS via a hybrid technology.The main reason currently hampering the use of this technology is an absence of controlled fabrication techniques in MOS type configurations with predictable device characteristics. Adequate physical models and simulation tools are necessary to address this issue.This collaborative research involves four partners: 1) Pisa : Atomistic modelling of ballistic transport in gated structures with contacts.(2) Vienna: Effective mass approach to transport inclusive of scattering.(3) De Montfort University : Characterisation, parameter extraction and defect analysis of devices fabricated at Cambridge. The parameters will be fed into the modelling at Pisa and Vienna.(4) Cambridge University : Fabrication of devices.The overall goal of the project is to carry out a comprehensive analysis linking theory with experiment to enable some fundamental design rules for fabrication of such technologies in future.
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Organisation Website: http://www.cam.ac.uk