| EPSRC Reference: |
EP/D033845/1 |
| Title: |
The development of advanced low cost InP based PhotoVoltaic Devices |
| Principal Investigator: |
Nicholas, Professor RJ |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Oxford Physics |
| Organisation: |
University of Oxford |
| Scheme: |
Technology Programme (Pre-FEC) |
| Starts: |
01 November 2005 |
Ends: |
30 April 2009 |
Value (£): |
234,586
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
Materials Synthesis & Growth |
| Optical Devices & Subsystems |
Solar Technology |
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Summary on Grant Application Form |
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Thermophotovoltaic (TPV) devices are photovoltaic cells which produce electricity from the radiation emitted by heat sources such as are found in industrial combustion processes or domestic heaters. The close proximity of the cell to the source means that these cells have potentially 100-10,000 times the output of a silicon solar cell. Potential applications include industrial waste heat recovery, domestic combined heat and power (CHP), embedded generation, military applications, hydrogen powered transport, and solar concentrator systems.TPV cells currently available primarily use GaSb, an expensive material. This project aims to develop 3-terminal devices based on InGaAs/InP responding to both the 1-1.7 micron infrared region of the spectrum currently covered by GaSb and the shorter 0.5/1 micron region. These will exploit the advantages of cheaper InP substrates and higher efficiency from broader spectral coverage. In the longer term the project will assess potential for InP devices grown on silicon substrates to address the solar concentrator market.This project will combine expertise from the semiconductor wafer manufacturer, WaferTech (a subsidiary of IQE, the commercial epitaxial grower) with epitaxial growth and processing expertise in the materials system InGaAs/InP at the CIP (Centre for Integrated Photonics), with the basic characterisation and device design work to be performed at the Oxford Physics dept.The objectives are to produce prototype high efficiency, low cost photovoltaic cells based on InP/InGaAs technologies, in line with the priorities of the DTI Energy Technology program of cost reduction and better performance for photovoltaics. The specific targets are:1) To demonstrate that it is possible to produce a high efficiency photovoltaic cell sensitive to the near infrared part of the black body spectrum using InP substrates.2) To produce 3-terminal PV cells with independent responses to the wavelength ranges 1.2 - 1.7 and 0.5 - 1.2 microns, giving high efficiency for both solar and TPV applications. 3) To understand the issues determining the cost of starting material and device fabrication, and to produce low cost substrates specifically for TPV devices.4) To investigate the feasibility of fabricating InP-based TPV cells on Si substrates using an intermediary oxide layer, and if appropriate to fabricate prototype devices.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.ox.ac.uk |