| EPSRC Reference: |
EP/C535553/1 |
| Title: |
NSF: Surface Electronic Properties of Indium Nitride for Potential Device Applications |
| Principal Investigator: |
McConville, Professor CF |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Physics |
| Organisation: |
University of Warwick |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 September 2005 |
Ends: |
30 November 2008 |
Value (£): |
201,903
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
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Summary on Grant Application Form |
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The proposed programme will investigate the near-surface electronic properties of a range of indium nitride (InN) based materials, including indium gallium nitride (InGaN), indium aluminium nitride (InAIN), and both n- and p-doped InN thin films. This work is both a natural continuation of our successful research programme on the electronic properties of narrow band gap semiconductors surfaces and interfaces and takes our research forward into a new and exciting area, investigating what is considered to be the last unexplored III-V semiconductor material.As a result of the newly discovered narrow band gap of InN in 2002, the ternary alloy, InGaN has a band gap across its composition range that spans the entire optical region from 0.7 to 3.4 eV. This material has the potential to produce solar cells that are much more efficient than the current generation triple junction devices. The development of novel semiconductor devices is intimately related to fundamental investigations of interface physics. With continuing miniaturisation in semiconductor device technology, the interface itself is increasingly becoming the device. To fully realize the potential of InN-based low dimensional devices, understanding of both the surface and interface properties is essential. Indeed, recent results have shown that InN also has potential chemical sensing applications, as a result of the change in surface conductivity that has been observed upon exposure of the surface to solvents. Having recently demonstrated the existence of electron accumulation at the InN surface for the first time in collaboration with the Cornell University nitrides research group, we propose to perform a detailed investigation of this phenomenon in a range of InN thin films and related ternary alloys. We will use a novel methodology, combining high-resolution electron-energy-loss spectroscopy with associated semi-classical dielectric theory simulations, charge profile calculations and x-ray photoelectron spectroscopy for surface chemical analysis. This unique approach allows us to obtain information relating to the band-bending, effective mass, surface state density, and carrier densities in this range of novel materials. This proposal is submitted in parallel with an application to the National Science Foundation (NSF) in the USA by Dr. W.J. Schaff of Cornell University to fund the growth of state-of-the-art Indium nitride material, and its related ternary alloys, that are required for the proposed investigations.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.warwick.ac.uk |