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EPSRC Reference: EP/C512014/1
Title: Optically Detected X-Ray Absorption In Semiconductors: Development Of A Model System AT MAXlab, Sweden
Principal Investigator: Poolton, Dr N
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Department: Photon Science
Organisation: STFC Laboratories (Grouped)
Scheme: Overseas Travel Grants Pre-FEC
Starts: 07 May 2005 Ends: 06 August 2005 Value (£): 3,423
EPSRC Research Topic Classifications:
Condensed Matter Physics
EPSRC Industrial Sector Classifications:
No relevance to Underpinning Sectors
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Summary on Grant Application Form
In understanding and developing new optoelectronic quantum systems, knowledge about the intimate link between the structure of materials and their photon emission properties is a basic pre-requisite, yet very few methods are available for making this direct connection. Whilst sample structures can be probed by a wide variety of methods (including synchrotron-based EXAFS/NEXAFS) and emission can be monitored using many types of luminescence-based measurements, linking these individual results is not trivial and prone to errors in interpretation.One method that has the ability to make a direct link between sample structure and emission is Optically Detected XAS (OD-XAS). The phenomenological model often used to explain why OD-XAS works, is that energy transfer processes that give rise to luminescence in a sample change as the energy of the exciting photons is scanned across the x-ray absorption edges of atomic species of interest. In this way, particular x-ray absorption structures can be directly attributable to specific luminescence features. However, there are many complexities in the behaviour of OD-XAS, and an underlying theory, based upon the analysis of model systems is becoming increasing necessary. The purpose of this research is to undertake exactly this research, on model meso-structured semiconductor systems at the MAXIab synchrotron, Sweden.
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