EPSRC Reference: |
EP/C001699/1 |
Title: |
Room-temperature Mid-infrared Diode Photodetectors Based on MBE Grown InNAs/InAs Alloys |
Principal Investigator: |
Zhuang, Dr QD |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Physics |
Organisation: |
Lancaster University |
Scheme: |
First Grant Scheme Pre-FEC |
Starts: |
01 December 2004 |
Ends: |
29 February 2008 |
Value (£): |
123,594
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EPSRC Research Topic Classifications: |
Materials Characterisation |
Materials Processing |
Materials Synthesis & Growth |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
There is a need for efficient mid-infrared photodetectors which can operate at room temperature and particularly at specific wavelengths of interest corresponding to key gas absorption bands, such as 3.3um (CH4), 4.2um (CO2) and 4.5um (CO), for use in a variety of gas sensors. However, there are a number of disadvantages which currently restrict the widespread use of sensitive semiconductor photodetectors in portable gas detection instruments.In this project we will grow InAsN on InAs substrates, with small lattice mismatch using small amounts of nitrogen. High crystalline quality InAsN will be obtained, so that the quantum efficiency of the resulting devices should be high. The basic idea is to use this to achieve a high quality type I double heterostructure diode in a narrow bandgap system. More specifically, in this way we aim to extend the spectral response of a type I InAs-based photodetector out to 4.5um at room temperature.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.lancs.ac.uk |