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Details of Grant 

EPSRC Reference: DT/F007051/1
Title: Large Area Micro Patterning of Devices (LAMP)
Principal Investigator: Flewitt, Professor AJ
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Engineering
Organisation: University of Cambridge
Scheme: Technology Programme
Starts: 01 January 2008 Ends: 31 December 2009 Value (£): 129,013
EPSRC Research Topic Classifications:
Materials Characterisation Materials Synthesis & Growth
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
Active matrix (AM) liquid crystal displays (LCDs) have gained a dominant position in the small and medium size flat panel display market. This success has been enabled by the hydrogenated amorphous silicon thin film transistors (TFTs) that drive the individual display pixels. However, the performance limitations of these devices - particularly the low mobility and susceptibility to shifts in the threshold voltage with time - means that they cannot be used directly in the active matrix of the next generation of flat panel displays based upon organic light emitting materials. Furthermore, there is a drive towards producing displays on flexible, plastic substrates to improve portability and robustness whilst reducing cost. The LAMP proposal intends to directly address these issues by combining rf magnetron sputtering at room temperature to deposit the materials required to produce a TFT backplane array based on zinc oxide (ZnO) as the channel material with a novel laser-patternable, peelable masking (LPM) technology that takes advantage of the flexibility of plastic substrates to give a low cost alternative to photolithography and ink-jet printing for device fabrication. The novel LPM masking approach uses a thin, easy-peel, masking material that lies in intimate contact on top of a substrate. Deposition of materials may then take place on top of the mask which, when removed, leaves material on the substrate only where holes existed in the mask. A registration system allows multiple layers of material to be accurately aligned to each other. A new patterning technology brings with it a new set of design rules. The main role of Cambridge University within this project will be to design the TFT backplane circuitry to allow fabrication of devices using the LPM tecnology with the function of driving small molecule organic light emitting diode (SMOLED) pixel elements. This will require involvement in the optimisation of the ZnO material deposited by rf magnetron sputtering as well as rigorous device characterisation. Particular attention will need to be paid to the nature of the interface between the ZnO channel and the gate dielectric employed and to the degradation mechanisms in the ZnO TFTs. Cambridge University has many years of experience in accelerated lifetime testing of TFTs and this will be used to gain an understanding of the fundamental physical processes at work during device degradation. This work will be performed in close colaboration with a project on Zinc Oxide TFTs (HiPZOT) that is being funded through the 'Cambridge Integrated Knowledge Centre for Advanced Manufacturing Technologies for Photonics and Electronics' .
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Organisation Website: http://www.cam.ac.uk