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Details of Grant 

EPSRC Reference: GR/R46465/01
Title: Group III-Nitride Heterostructures for Quantum Tunnelling Devices Grown by Molecular Beam Epitaxy
Principal Investigator: Foxon, Professor CT
Other Investigators:
Harrison, Dr I Kent, Professor A Eaves, Professor L
Main, Professor P
Researcher Co-Investigators:
Project Partners:
Department: Sch of Physics & Astronomy
Organisation: University of Nottingham
Scheme: Standard Research (Pre-FEC)
Starts: 01 January 2002 Ends: 30 June 2005 Value (£): 275,306
EPSRC Research Topic Classifications:
Condensed Matter Physics Materials Characterisation
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
We will perform a feasibility study for the MBE growth of quantum transport devices (QTDs) based on the group III-nitiride material system. Initially, we will grow single-barrier p-i-p and n-i-n tunnel devices to allow us to measure band offsets. Then we shall use the acquired information to design and fabricate resonant tunnnelling diodes (RTDs). Further measurements will allow us to optimise the design with the goal of creating a device with a peak to valley current ratio of 3:1 at room temperature. The prospects for the fabrication of more sophisticated OTD will be evaluated.
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Organisation Website: http://www.nottingham.ac.uk