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Details of Grant 

EPSRC Reference: GR/L35744/01
Title: OPTOELECTRONIC COMPONENTS EXPLOITING POROUS SILICON MATERIALS
Principal Investigator: Benson, Professor TM
Other Investigators:
Researcher Co-Investigators:
Project Partners:
BT Pre Nexus Migration QinetiQ
Department: Sch of Electrical and Electronic Eng
Organisation: University of Nottingham
Scheme: Standard Research (Pre-FEC)
Starts: 01 July 1997 Ends: 30 June 1999 Value (£): 74,349
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
The collaborating bodies on this project have, I recent years, established:(I) photoluminescence and efficient electroluminescence in porous silicon material,(ii) reliable and reproducible yet very simple methods for accurately controlling the porosity of porous silicon ( and hence its refractive index).(iii) original technologies for producing optical waveguides and Fabray-Perot reflective components based on and exploiting the design feasibility offered by (ii) and (iv) that porous silicon acts as a host for a range of materials including liquids and electro-optic polymers. These materials offer many potential advantages including low cost compatibility and ready integration with silicon electronics and technology, operation across a wide range of wavelengths (visible to IR) and the availability of a wide range of refractive index values. The proposed work aims to exploit these major advances to provide demonstrations of integration of source and waveguides, optical waveguide design exploiting the range of available refractive index to control polarisation and active devices based on poled oxidised porous silicon, carrier injection, the introduction of species into the pores of the material.
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Organisation Website: http://www.nottingham.ac.uk