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EPSRC Reference: GR/J37782/01
Title: SOLID STATE INFRA-RED EMITTERS FOR THE 2-10UM BAND BASED ON INAS LOW DIMENSIONAL
Principal Investigator: Phillips, Professor C
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Physics
Organisation: Imperial College London
Scheme: Standard Research (Pre-FEC)
Starts: 20 January 1994 Ends: 19 January 1996 Value (£): 135,772
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
The recently observed dramatic improvements (over bulk crystals) in the luminescence efficiency (up to QE + 10%) of narrow gap LDS based on InAs will be studied with temperature dependent PL and picosecond infrared pump-probe techniques. Theoretical predictions of the suppression of Auger recombination in type-II LDS will be tested quantitatively by measuring carrier concentration decay rates directly by psec pump-probe spectroscopy. Narrow gap LDS based on doping superlattices in InAs and InSb, and type-II heterostructures in InAs/In(As,Sb), InSb/In(As,Sb) and InAs/BaSb will be examined for the degree of Auger suppression and Pl efficiencies will be optimised. LEDs and cleaved-facet gain-guided laser diodes will be fabricated in these materials and their efficiencies, threshold currents and operating lifetimes will be correlated with the all optical measurements above. Auger and defect related recombination rates will be also measured by analysis of reverse bias biode I-V characteristics and the effect of the recently developed buffer layer growth schemes will be studied in detail.
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Organisation Website: http://www.imperial.ac.uk