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Details of Grant 

EPSRC Reference: EP/D015782/1
Title: Spectroscopy and Applications of Nitride Quantum Dots
Principal Investigator: Mowbray, Professor D
Other Investigators:
Parbrook, Professor P Wang, Professor T
Researcher Co-Investigators:
Project Partners:
Department: Physics and Astronomy
Organisation: University of Sheffield
Scheme: Standard Research (Pre-FEC)
Starts: 01 January 2006 Ends: 30 September 2009 Value (£): 136,479
EPSRC Research Topic Classifications:
Materials Characterisation Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
EP/D003407/1
Panel History:
Panel DatePanel NameOutcome
14 Jul 2005 Joint Photonics Prioritisation Panel (Technolgy) Deferred
Summary on Grant Application Form
InGaN is the used in the manufacture of bright blue and white light emitting diodes and lasers, in the future these devices will replace normal incandescent bulbs in many applications, saving electricity and, in the case of DVD players, increasing storage capacity. They are made by chemically depositing very thin films of InGaN on to GaN. When a current flows in the InGaN layers electrons are confined within the layer and emit light. The authors of this proposal intend to confine the electrons not only in the InGaN layer but into very small regions of that layer by means of nanometer scale clumps of material known as quantum dots. By studying the way in which these dots form, the way in which electrons are confined and the way in which they emit light they intend to improve the efficiency of emission from existing devices and thus realise the potential improvements to society listed above.
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Organisation Website: http://www.shef.ac.uk